Electron mobility engineering in semiconductor heterostructures

[1]  M. Stroscio,et al.  Momentum relaxation of 2D electron gas due to near-surface acoustic phonon scattering☆ , 1999 .

[2]  M. Heiblum,et al.  Extremely high-mobility two dimensional electron gas: Evaluation of scattering mechanisms , 1997 .

[3]  West,et al.  Evidence for virtual-phonon exchange in semiconductor heterostructures. , 1993, Physical review. B, Condensed matter.

[4]  West,et al.  Mutual friction between parallel two-dimensional electron systems. , 1991, Physical review letters.

[5]  V. Karpus.  Theoretical limit of mobility of two-dimensional electrons in GaAs , 1990 .

[6]  West,et al.  Observation of a Bloch-Grüneisen regime in two-dimensional electron transport. , 1990, Physical review. B, Condensed matter.

[7]  K. West,et al.  Electron mobilities exceeding 107 cm2/V s in modulation‐doped GaAs , 1989 .

[8]  J. Harris,et al.  LETTER TO THE EDITOR: Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures , 1989 .

[9]  V. G. Keramidas,et al.  Negative differential resistance in AlAs/NiAl/AlAs heterostructures: Evidence for size quantization in metals , 1988 .

[10]  Peter J. Price,et al.  Low temperature two-dimensional mobility of a GaAs heterolayer , 1984 .

[11]  Peter J. Price,et al.  Hot electrons in a GaAs heterolayer at low temperature , 1982 .

[12]  P. J. Price.  Two‐dimensional electron transport in semiconductor layers II: Screening , 1981 .