From bidirectional rectifier to polarity-controllable transistor in black phosphorus by dual gate modulation
暂无分享,去创建一个
Shixuan Du | Junjie Li | Sokrates T. Pantelides | Guocai Wang | Lihong Bao | Ruisong Ma | Tengfei Pei | Yu-Yang Zhang | Liangmei Wu | Zhang Zhou | Haifang Yang | Changzhi Gu | Hong-Jun Gao | S. Du | Hongjun Gao | S. Pantelides | C. Gu | Junjie Li | L. Bao | Haifang Yang | Ruisong Ma | Liangmei Wu | Yu‐yang Zhang | Zhang Zhou | Tengfei Pei | Guocai Wang
[1] F. Xia,et al. Tunable optical properties of multilayer black phosphorus thin films , 2014, 1404.4030.
[2] Unipolar transport in bilayer graphene controlled by multiple p-n interfaces , 2012, 1203.6591.
[3] P. Avouris,et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. , 2014, Nature nanotechnology.
[4] Rostislav A. Doganov,et al. Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms. , 2016, Nano letters.
[5] Giuseppe Iannaccone,et al. Electronics based on two-dimensional materials. , 2014, Nature nanotechnology.
[6] D. Akinwande,et al. Flexible black phosphorus ambipolar transistors, circuits and AM demodulator. , 2015, Nano letters.
[7] Andre K. Geim,et al. Two-dimensional atomic crystals. , 2005, Proceedings of the National Academy of Sciences of the United States of America.
[8] O. Yazyev,et al. Polycrystalline graphene and other two-dimensional materials. , 2014, Nature nanotechnology.
[9] Jeong-O Lee,et al. Complete gate control of supercurrent in graphene p–n junctions , 2013, Nature Communications.
[10] Yoshihiro Iwasa,et al. Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor. , 2013, Nano letters.
[11] Du Xiang,et al. Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus , 2015, Nature Communications.
[12] Takhee Lee,et al. Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio. , 2015, ACS nano.
[13] Klaus von Klitzing,et al. Four-terminal magneto-transport in graphene p-n junctions created by spatially selective doping. , 2009, Nano letters.
[14] P. Ye,et al. Semiconducting black phosphorus: synthesis, transport properties and electronic applications. , 2014, Chemical Society Reviews.
[15] peixiong zhao,et al. Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices. , 2016, Nano letters.
[16] Xianfan Xu,et al. Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode. , 2014, ACS nano.
[17] M. Caironi,et al. Control of Ambipolar and Unipolar Transport in Organic Transistors by Selective Inkjet‐Printed Chemical Doping for High Performance Complementary Circuits , 2014 .
[18] J. Knoch,et al. High-performance carbon nanotube field-effect transistor with tunable polarities , 2005, IEEE Transactions on Nanotechnology.
[19] Andres Castellanos-Gomez,et al. Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating. , 2014, Nature communications.
[20] P. Ye,et al. Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling. , 2014, ACS Nano.
[21] Xianfan Xu,et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. , 2014, ACS nano.
[22] P. Jeon,et al. Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching. , 2015, Nano letters.
[23] Lian Ji,et al. Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping , 2013 .
[24] T. Palacios,et al. High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits. , 2015, Nano letters.
[25] Andre K. Geim,et al. The rise of graphene. , 2007, Nature materials.
[26] A. Castellanos-Gómez,et al. Black Phosphorus: Narrow Gap, Wide Applications. , 2015, The journal of physical chemistry letters.
[27] Kazuhito Tsukagoshi,et al. Electrostatically Reversible Polarity of Dual-Gated Graphene Transistors , 2014, IEEE Transactions on Nanotechnology.
[28] Xianfan Xu,et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. , 2014, ACS nano.
[29] Gyu-Tae Kim,et al. Few-layer black phosphorus field-effect transistors with reduced current fluctuation. , 2014, ACS nano.
[30] C. N. Lau,et al. Ionic Liquid Gating of Suspended MoS2 Field Effect Transistor Devices. , 2015, Nano letters.
[31] Andres Castellanos-Gomez,et al. Photocurrent generation with two-dimensional van der Waals semiconductors. , 2015, Chemical Society reviews.
[32] Hua Yu,et al. Gate tunable MoS2–black phosphorus heterojunction devices , 2015 .
[33] Kinam Kim,et al. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier , 2012, Science.
[34] Likai Li,et al. Black phosphorus field-effect transistors. , 2014, Nature nanotechnology.
[35] J. Appenzeller,et al. High performance multilayer MoS2 transistors with scandium contacts. , 2013, Nano letters.
[36] H. Zhang,et al. Chemical sensing by band modulation of a black phosphorus/molybdenum diselenide van der Waals hetero-structure , 2016 .
[37] Min Sup Choi,et al. Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors , 2014, Scientific Reports.
[38] Kazuhito Tsukagoshi,et al. Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors. , 2015, ACS nano.
[39] Tobin J. Marks,et al. Gate-tunable carbon nanotube–MoS2 heterojunction p-n diode , 2013, Proceedings of the National Academy of Sciences.
[40] Yusuf Leblebici,et al. Configurable Logic Gates Using Polarity-Controlled Silicon Nanowire Gate-All-Around FETs , 2014, IEEE Electron Device Letters.
[41] A. H. Castro Neto,et al. Electric field effect in ultrathin black phosphorus , 2014 .
[42] A. Morita,et al. Band structure and optical properties of black phosphorus , 1984 .
[43] Hao Jiang,et al. Black phosphorus radio-frequency transistors. , 2014, Nano letters.
[44] A. Radenović,et al. Single-layer MoS2 transistors. , 2011, Nature nanotechnology.
[45] S. Chae,et al. High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering , 2015, Nature Communications.