A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology
暂无分享,去创建一个
Bernd Heinemann | Andreas Stelzer | Muhammad Furqan | Faisal Ahmed | B. Heinemann | A. Stelzer | Faisal Ahmed | M. Furqan
[1] Andreas Stelzer,et al. A SiGe-based broadband 100–180-GHz differential power amplifier with 11 dBm peak output power and >1.3THz GBW , 2016, 2016 11th European Microwave Integrated Circuits Conference (EuMIC).
[2] Gabriel M. Rebeiz,et al. A 110–134-GHz SiGe Amplifier With Peak Output Power of 100–120 mW , 2014, IEEE Transactions on Microwave Theory and Techniques.
[3] P. Chevalier,et al. 160-GHz Power Amplifier Design in Advanced SiGe HBT Technologies With ${P}_{\rm sat}$ in Excess of 10 dBm , 2013, IEEE Transactions on Microwave Theory and Techniques.
[4] Liang-Hung Lu,et al. A 40-GHz Low-Noise Amplifier With a Positive-Feedback Network in 0.18-$\mu{\hbox{m}}$ CMOS , 2009, IEEE Transactions on Microwave Theory and Techniques.
[5] J. C. Scheytt,et al. A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche Area in SiGe , 2012, IEEE Transactions on Microwave Theory and Techniques.
[6] Minkyu Je,et al. Analysis and Design of Gain Enhanced Cascode Stage Utilizing a New Passive Compensation Network , 2013, IEEE Transactions on Microwave Theory and Techniques.
[7] Huei Wang,et al. Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances , 2013, IEEE Transactions on Microwave Theory and Techniques.
[8] James F. Buckwalter,et al. A 22 dBm, 0.6 mm² D-Band SiGe HBT Power Amplifier Using Series Power Combining Sub-Quarter-Wavelength Baluns , 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
[9] Andreas Stelzer,et al. A 140-180-GHz Broadband Amplifier with 7 dBm OP1dB and 400 GHz GBW in SiGe BiCMOS , 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).