论文信息 - Electrically injected AlGaN nanowire deep ultraviolet lasers

Electrically injected AlGaN nanowire deep ultraviolet lasers

We report on the demonstration of AlGaN nanowire lasers in the ultraviolet (UV)-B and UV-C bands. The AlGaN nanowires were grown directly on Si substrate and were characterized by the presence of quantum-dot-like nanostructures. At room temperature, the lasing threshold was measured to be ∼30 μA.

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