论文信息 - Refractive index of Ga1−xAlxAs

Refractive index of Ga1−xAlxAs

Abstract A semi-empirical method for calculating the room temperature refractive index of Ga 1− x Al x As at energies below the direct band edge is presented. This quantity is important in the design of GaAs heterostructure lasers as well as other wave-guiding devices using these materials. The calculated values compare favorably with recent data. The method is shown to be useful for the Ga 1− x As x P system as well.

Martin A. Afromowitz | M. Afromowitz

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