Novel RF Process Monitoring Test Structure for

This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conven- tional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitances also noted for metal-insulator-metal capacitor and MOS varactor. Pos- sible process monitoring test structure is also suggested as a refer- ence benchmarking indicator for interconnects. Index Terms—MIM capacitor, MOS varactor and interconnect, process monitoring, RFCMOS, scribe line.