Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

The development of a high quantum e$ciency, fast photodetector, with internal gain ampli"cation for the wavelength range 450}600 nm is one of the critical issues for experimental physics } registration of low-intensity light photons #ux. The new structure of Silicon Avalanche Detectors with high internal ampli"cation (105}106) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of MetalResistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric "eld near the ‘needlea pn-junction and negative feedback for stabilization of avalanche process due to resistive layer. ( 2000 Elsevier Science B.V. All rights reserved.