论文信息 - Current Gain Dependence on Emitter Width in 4H-SiC BJTs

Current Gain Dependence on Emitter Width in 4H-SiC BJTs

This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain β=64 and a breakdown voltage of 1100 V. The high β value is attributed to high material quality obtained after a continuous epitaxial growth of the base-emitter junction. The current gain of the BJTs increases with increasing emitter width indicating a significant influence of surface recombination. This “emitter-size” effect is in good agreement with device simulations including recombination in interface states at the etched termination of the baseemitter junction.

Carl-Mikael Zetterling | Mikael Östling | Hyung-Seok Lee | Adolf Schöner | Martin Domeij

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