Properties of InP self-assembled quantum dots embedded in In0.49(AlxGa1−x)0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition

We have studied the properties of InP self-assembled quantum dots embedded in various In0.49(AlxGa1−x)0.51P matrix layers to optimize the growth condition of the quantum dots and structures for III-phosphide quantum-dot-based lasers operating in visible spectral regions. Self-assembled quantum dot-related structures are grown by low-pressure metalogranic chemical vapor deposition and characterized by atomic-force microscopy, high-resolution transmission-electron microscopy, and photoluminescence. High density (∼1010 cm−2) and conveniently sized (∼5×20 nm) quantum dots are produced by growth condition optimization. We find that the quantum-dot heterostructure with a In0.49(AlxGa1−x)0.51P matrix layer having the largest direct band gap produces the most efficient luminescence at room temperature. Laser structures are prepared using optimized growth conditions and matrix materials. Laser operation with lasing wavelengths λ=650–680 nm are demonstrated at 77 and 300 K by optical pumping.

[1]  N. Holonyak,et al.  Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition , 2001 .

[2]  R. Dupuis,et al.  High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grown by metalorganic chemical vapor deposition , 2001 .

[3]  J. Merz,et al.  Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates , 2001 .

[4]  O. Schmidt,et al.  Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots , 2000 .

[5]  D. Bimberg,et al.  Quantum-dot heterostructure lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[6]  T. Riedl,et al.  Growth of self-assembled InP quantum islands for red-light-emitting injection lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[7]  Diana L. Huffaker,et al.  Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser , 1999 .

[8]  Dieter Bimberg,et al.  Spontaneous ordering of nanostructures on crystal surfaces , 1999 .

[9]  Jasprit Singh,et al.  Nonequilibrium distribution in quantum dots lasers and influence on laser spectral output , 1999 .

[10]  A. Zunger,et al.  Indirect band gaps in quantum dots made from direct-gap bulk materials , 1999 .

[11]  T. Riedl,et al.  Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size , 1998 .

[12]  F. Scholz,et al.  Size control of self-assembled InP/GaInP quantum islands , 1998 .

[13]  S. Noda,et al.  Self-assembled InP islands grown on GaP substrate , 1998 .

[14]  L. Samuelson,et al.  A REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION AND ATOMIC FORCE MICROSCOPY STUDY OF THE CHEMICAL BEAM EPITAXIAL GROWTH OF INAS AND INP ISLANDS ON (001) GAP , 1998 .

[15]  K. Eberl,et al.  Self-assembling InP quantum dots for red lasers , 1997 .

[16]  K. Syassen,et al.  Structural and optical characterization of InP/GalnP islands grown by solid-source MBE , 1996 .

[17]  J. Ahopelto,et al.  Strain‐induced quantum dots by self‐organized stressors , 1995 .

[18]  K. Eberl,et al.  Nanoscale InP islands embedded in InGaP , 1995 .

[19]  P. Castrillo,et al.  Study of the two‐dimensional–three‐dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum‐sized structures , 1994 .

[20]  W. H. Weinberg,et al.  Formation of coherently strained self-assembled InP quantum islands on InGaP/GaAs(001) , 1994 .

[21]  M. Asada,et al.  Gain and the threshold of three-dimensional quantum-box lasers , 1986 .

[22]  H. Sakaki,et al.  Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .

[23]  N. Holonyak,et al.  Room‐temperature continuous operation of photopumped MO‐CVD AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well lasers , 1978 .

[24]  K. Masuda,et al.  Effect of ion dose rate on rapid laser annealing of implanted GaAs , 1996 .

[25]  K. Nishi,et al.  Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy , 1993 .