Heavily‐doped n‐type InP and InGaAs grown by metalorganic chemical vapor deposition using tetraethyltin

Heavily doped n‐type InP and InGaAs epitaxial layers have been grown by metalorganic chemical vapor deposition at atmospheric pressure using tetraethyltin (TESn) as a dopant source. Sn‐doped InP and InGaAs layers have been grown with doping concentrations as high as n300K∼3.3×1019 cm−3 and n300 K∼6.1×1019 cm−3, respectively. Hall measurements of Nd‐Na at 300 and 77 K indicate that the Sn is uncompensated up to these concentrations. Analysis of the Sn concentration in InP:Sn and InGaAs:Sn layers using secondary ion mass spectrometry, shows that all of the Sn is ionized in InP and InGaAs until a limit is reached that corresponds to the electrical limits. SIMS profiles also show that the use of TESn for the growth n+ InP and InGaAs layers results in no severe memory effects and that abrupt Sn doping profiles can be achieved.