Evolution of Filament Formation in Ni/HfO2/SiOx/Si‐Based RRAM Devices
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Xing Wu | Nagarajan Raghavan | Michel Bosman | Kin Leong Pey | Dongkyu Cha | S. Mei | Xing Wu | K. Pey | N. Raghavan | Xi-xiang Zhang | M. Bosman | D. Cha | S. Mei | Kun Li | Xixiang Zhang | Kun Li
[1] F. Nottebohm,et al. Rudimentary substrates for vocal learning in a suboscine , 2013, Nature Communications.
[2] Yuchao Yang,et al. Observation of conducting filament growth in nanoscale resistive memories , 2012, Nature Communications.
[3] Karen Maex,et al. In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines , 2001 .
[4] L. Gu,et al. In situ TEM Observation of Resistance Switching in Titanate Based Device , 2014, Scientific Reports.
[5] A. C. Neumann. Slow domains in semi-insulating GaAs , 2001 .
[6] X. Wu,et al. The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks , 2010 .
[7] Shimeng Yu,et al. Metal–Oxide RRAM , 2012, Proceedings of the IEEE.
[8] Pennycook,et al. High-resolution incoherent imaging of crystals. , 1990, Physical review letters.
[9] M. Kozicki,et al. Erratum: Electrochemical metallization memories - Fundamentals, applications, prospects (Nanotechnology (2011) 22 (254003)) , 2011 .
[10] C. Gerber,et al. Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals , 2001 .
[11] Lih-Juann Chen,et al. Dynamic evolution of conducting nanofilament in resistive switching memories. , 2013, Nano letters.
[12] Wilfried Vandervorst,et al. Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices. , 2014, Nano letters.
[13] Salvatore Lombardo,et al. Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient , 2003 .
[14] James M. Tour,et al. In situ imaging of the conducting filament in a silicon oxide resistive switch , 2012, Scientific reports.
[15] T. W. Hickmott. LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS , 1962 .
[16] Jae Hyuck Jang,et al. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.
[17] Kate J. Norris,et al. Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch. , 2013, Nano letters.
[18] Jung-Hyun Lee,et al. Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. , 2009, Nano letters.
[19] Nagarajan Raghavan,et al. Unipolar recovery of dielectric breakdown in fully silicided high-κ gate stack devices and its reliability implications , 2010 .
[20] H. Takagi,et al. Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure , 2009 .