TEM analysis of threading dislocations in ELO-GaN grown with controlled facet planes

[1]  K. Hiramatsu,et al.  Behavior of Threading Dislocations in SAG‐GaN Grown by MOVPE , 2000 .

[2]  A. Sakai,et al.  Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth , 2000 .

[3]  Tsukamoto,et al.  Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods , 2000, Journal of electron microscopy.

[4]  K. Hiramatsu,et al.  Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves , 1999 .

[5]  K. Nishiyama,et al.  Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III‐Nitrides: Effects of Reactor Pressure in MOVPE Growth , 1999 .

[6]  K. Hiramatsu,et al.  Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy , 1999 .

[7]  A. Sakai,et al.  TRANSMISSION ELECTRON MICROSCOPY OF DEFECTS IN GAN FILMS FORMED BY EPITAXIAL LATERAL OVERGROWTH , 1998 .

[8]  Masahiko Sano,et al.  InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices , 1997 .

[9]  Akira Sakai,et al.  Defect structure in selectively grown GaN films with low threading dislocation density , 1997 .

[10]  Akira Sakai,et al.  Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy , 1997 .

[11]  Shuji Nakamura,et al.  GaN Growth Using GaN Buffer Layer , 1991 .

[12]  H. Amano,et al.  Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer , 1986 .