论文信息 - Electrical transient study of negative resistance in SOI MOS transistors

Electrical transient study of negative resistance in SOI MOS transistors

Using electrical transients, we have investigated the negative resistance observed in the output characteristics at high gate voltages in MOS transistors made in SOI films. We show experimentally that this effect is due to a temperature rise in the device itself. This results from the poor thermal conductivity of the buried oxide of the SOI structure.

M. Haond | O. Le Neel

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