Localized ultra-thin GeOI: An innovative approach to germanium channel MOSFETs on bulk Si substrates
暂无分享,去创建一个
G. Ghibaudo | T. Skotnicki | S. Monfray | O. Kermarrec | Y. Campidelli | J. Hartmann | N. Loubet | S. Deleonibus | C. Tabone | E. Batail | C. Le Royer | J. Damlencourt | A. Pouydebasque | V. Delaye | P. Gautier | G. Rabillé | C. Arvet
[1] M. Jurczak,et al. Silicon-on-Nothing (SON)-an innovative process for advanced CMOS , 2000 .
[2] Shinichi Takagi,et al. Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction , 2001 .
[3] Yves Morand,et al. Fabrication of SiGe-on-insulator substrates by a condensation technique: an experimental and modelling study , 2007 .
[4] Hsing-Huang Tseng,et al. Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme , 2007, 2007 IEEE Symposium on VLSI Technology.
[5] M. Heyns,et al. High-Performance Deep Submicron Ge pMOSFETs With Halo Implants , 2007, IEEE Transactions on Electron Devices.
[6] Sheng-Yi Huang,et al. PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- $\hbox{SiN}_{x}$ Stressing Layer , 2008, IEEE Electron Device Letters.