论文信息 - On the Mechanisms of SiO2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis(t-butylamino)silane on the Hydroxylated SiO2(001) Surface - 字舞流文

On the Mechanisms of SiO2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis(t-butylamino)silane on the Hydroxylated SiO2(001) Surface

Hansong Cheng | B. Han | Jinping Wu | Manchao Xiao | X. Lei | M. O'neill | E. Karwacki | Qingfan Zhang | B. Han | Agnes Derecskei