Development of ZnSe‐based white light emitting diodes with longer lifetimes of over 10,000 hr

We have demonstrated ZnSe-based white light emitting diodes (LEDs) with longer lifetimes of over 10,000 hr at 14.5A/cm2 by introducing an i-ZnMgBeSe/p-ZnMgSe double cladding structure, which includes a very thin i-ZnMgBeSe layer for suppressing electron overflow and a p-ZnMgSSe layer for efficient p-type carrier concentration. By adopting the double cladding layer instead of only the conventional p-ZnMgSSe cladding layer, rapid degradation is suppressed and the lifetime tendency becomes similar to that of the LEDs consisting of a III-V semiconductor system. The device simulation and the temperature dependence of optical power showed that the i-ZnMgBeSe layer played the main role in increasing electron confinement. Our experimental data and reliability test results indicate that the suppression of the electron overflow is essential to achieve a long lifetime acceptable for practical use. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 154(4): 42–48, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20285