论文信息 - Growth of alloy GaInP crystals by compositional conversion of InP layers grown on GaP substrates in an LPE system - 字舞流文

Growth of alloy GaInP crystals by compositional conversion of InP layers grown on GaP substrates in an LPE system

S. Dost | A. Tanaka | A. Motogaito | M. Kimura | H. Katsuno | T. Sukegawa

[1] S. Dost,et al. A numerical analysis for the conversion phenomenon of GaAs to GaAsP on a GaP substrate in an LPE system , 1996 .

[2] S. Dost. Recent Developments in Modeling of Liquid Phase Electroepitaxy: A Continuum Approach , 1996 .

[3] Y. Hayakawa,et al. Rapid diffusion of Ga into InSb and precipitation of In , 1996 .

[4] Sadik Dost,et al. A solid-liquid diffusion model for growth and dissolution of ternary alloys by liquid phase epitaxy , 1996 .

[5] Y. Hayakawa,et al. DIFFUSION OF BOTH GA AND BI INTO INSB SEEDS DURING GROWTH OF INGASBBI , 1994 .

[6] A. Tanaka,et al. Conversion of GaAs Layer Grown on GaP Substrate to GaAsP in LPE System , 1993 .

[7] J. Nishizawa,et al. Observation of the characteristic surface morphology of In1-xGaxP epitaxial layers with large lattice mismatch to the GaP substrate , 1986 .

[8] G. Stillman,et al. LPE diffusion-limited growth of InGaAs , 1986 .

[9] I. Saunders. Crystal growth '78 , 1979 .

[10] D. L. Kendall,et al. Self‐Diffusion in Indium Antimonide , 1969 .