Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon

The relevant hole transport and recombination parameters in heavily doped n-type silicon under steady state are the hole diffusion length and the product of the hole diffusion coefficient times the hole equilibrium concentration. These parameters have measured in phosphorus-doped silicon grown by epitaxy throughout nearly two orders of magnitude of doping level. Both parameters are found to be strong functions of donor concentration. The equilibrium hole concentration can be deduced from the measurements. A rigid shrinkage of the forbidden gap appears as the dominant heavy doping mechanism in phosphorus-doped silicon.

[1]  Photoluminescence in heavily-doped Si(P) , 1978 .

[2]  R. M. Swanson,et al.  Measurement of Hall scattering factor in phosphorus‐doped silicon , 1985 .

[3]  J. Wagner.  Heavily doped silicon studied by luminescence and selective absorption , 1985 .

[4]  R. M. Swanson,et al.  Photovoltaic measurement of bandgap narrowing in moderately doped silicon , 1983 .

[5]  A. Wieder.  Emitter effects in shallow bipolar devices: Measurements and consequences , 1980, IEEE Transactions on Electron Devices.

[6]  M. Suzuki,et al.  Prospects of SST technology for high speed LSI , 1985, 1985 International Electron Devices Meeting.

[7]  M. Thewalt,et al.  Photoluminescence in heavily doped Si: B and Si: As , 1981 .

[8]  D. Burk,et al.  An empirical fit to minority hole mobilities , 1984, IEEE Electron Device Letters.

[9]  E. Susi,et al.  Recombination mechanisms and doping density in silicon , 1983 .

[10]  J. Wagner.  Photoluminescence and excitation spectroscopy in heavily doped n- and p-type silicon , 1984 .

[11]  R. M. Swanson,et al.  Silicon point contact concentrator solar cells , 1985, IEEE Electron Device Letters.

[12]  R. M. Swanson,et al.  Measurement of electron mobility in epitaxial heavily‐phosphorus‐doped silicon , 1984 .

[13]  R.D. Isaac,et al.  Effect of emitter contact on current gain of silicon bipolar devices , 1979, 1979 International Electron Devices Meeting.

[14]  R. M. Swanson,et al.  Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon , 1985, 1985 International Electron Devices Meeting.

[15]  H. Wulms,et al.  Base current of I2L transistors , 1976, 1976 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[16]  F. Lindholm,et al.  Evidence for low diffusivity and mobility of minority carriers in highly doped Si and interpretation , 1983 .

[17]  F. Lindholm,et al.  A method for determining energy gap narrowing in highly doped semiconductors , 1982, IEEE Transactions on Electron Devices.

[18]  M.S. Adler,et al.  Measurements of the p-n product in heavily doped epitaxial emitters , 1984, IEEE Transactions on Electron Devices.

[19]  D. Tang.  Heavy doping effects in p-n-p bipolar transistors , 1980, IEEE Transactions on Electron Devices.

[20]  Effect of emitter doping on device characteristics , 1973 .

[21]  R. Fair.  Optimum low-level injection efficiency of silicon transistors with shallow arsenic emitters , 1973 .

[22]  Chih-Tang Sah,et al.  A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices , 1977, IEEE Transactions on Electron Devices.

[23]  H. C. de Graaff,et al.  Measurements of bandgap narrowing in Si bipolar transistors , 1976 .

[24]  M.S. Adler,et al.  Measurement of heavy doping parameters in silicon by electron-beam-induced current , 1980, IEEE Transactions on Electron Devices.

[25]  J. A. del Alamo,et al.  Measuring and modeling minority carrier transport in heavily doped silicon , 1985 .

[26]  Richard M. Swanson,et al.  Modelling of minority-carrier transport in heavily doped silicon emitters , 1987 .

[27]  J.A. del Alamo,et al.  Measurement of hole mobility in heavily doped n-type silicon , 1986, IEEE Electron Device Letters.

[28]  S. M. Hu,et al.  Between carrier distributions and dopant atomic distribution in beveled silicon substrates , 1982 .