Parallel memristive filaments model applicable to bipolar and filamentary resistive switching

The concept of memristive filaments (MFs) is introduced, which is based on the memristors developed by the Hewlett–Packard group. The effects of key parameters on electrical properties are elucidated. The current–voltage features of bipolar and filamentary resistive switching are reproduced by using a parallel MF model with dynamic growth and rupture of multiple MFs. This model can be extended and adapted to most nanosized transition metal oxide memristors.

[1]  Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films , 2011 .

[2]  Heng-Yuan Lee,et al.  An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance , 2010, IEEE Electron Device Letters.

[3]  Myoung-Jae Lee,et al.  Modeling for bipolar resistive memory switching in transition-metal oxides , 2010 .

[4]  K. Eshraghian,et al.  The fourth element: characteristics, modelling and electromagnetic theory of the memristor , 2010, Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences.

[5]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[6]  Wei Wang,et al.  Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device , 2009 .

[7]  R. Williams,et al.  Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior. , 2009, Small.

[8]  S. Benderli,et al.  On SPICE macromodelling of TiO 2 memristors , 2009 .

[9]  Jung-Hyun Lee,et al.  Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. , 2009, Nano letters.

[10]  R. Williams,et al.  Exponential ionic drift: fast switching and low volatility of thin-film memristors , 2009 .

[11]  R. Waser,et al.  Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories , 2009 .

[12]  D. Ielmini,et al.  Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.

[13]  Stephen J. Wolf,et al.  The elusive memristor: properties of basic electrical circuits , 2008, 0807.3994.

[14]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[15]  A. Sawa.  Resistive switching in transition metal oxides , 2008 .

[16]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[17]  L. Chua.  Memristor-The missing circuit element , 1971 .