论文信息 - Excellent electro/stress-migration-resistance surface-silicide passivated giant-grain Cu-Mg alloy interconnect technology for giga scale integration (GSI)

Excellent electro/stress-migration-resistance surface-silicide passivated giant-grain Cu-Mg alloy interconnect technology for giga scale integration (GSI)

Completely (100)-oriented Cu-Mg films having giant grains (typical grain sizes of /spl sim/100 /spl mu/m) were obtained by depositing Cu-Mg films on SiO/sub 2/ followed by thermal annealing at 450/spl deg/C. The Cu-Mg film exhibits a room temperature resistivity of 1.81 /spl mu//spl Omega//spl middot/cm. And this interconnect exhibits 3 times larger migration resistance than the giant-grain Cu interconnect. Furthermore, by employing the self-aligned surface-silicide passivation to the Cu-Mg interconnect, the migration resistance is greatly enhanced. It exhibits two orders of magnitude larger migration resistance than non-passivated giant-grain Cu interconnect at a room temperature.

[1] Toshio Ito,et al. Thermal stability of copper interconnects fabricated by dry-etching process , 1995 .

[2] Tadashi Shibata,et al. Electrical Properties of Giant‐Grain Copper Thin Films Formed by a Low Kinetic Energy Particle Process , 1992 .

[3] Kazuyoshi Ueno,et al. A half-micron pitch Cu interconnection technology , 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.

[4] Toshio Ito,et al. Copper Interconnects Fabricated by Dry Etching Process , 1995 .

[5] Tadashi Shibata,et al. Evaluating the Large Electromigration Resistance of Copper Interconnects Employing a Newly Developed Accelerated Life‐Test Method , 1993 .

[6] Tadahiro Ohmi,et al. A novel self-aligned surface-silicide passivation technology for reliability enhancement in copper interconnects , 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.