Infrared studies of defects formed during postirradiation anneals of Czochralski silicon

This article reports on defect studies of neutron-irradiated Czochralski-grown silicon (Cz-Si) material by means of infrared spectroscopy. In particular, the investigation was focused on the evolution of the 828 cm−1 well-known band of A-center, due to isochronal anneals from room temperature (RT) up to ≈700 °C. The strength of the VO band begins to increase above ≈200 gradually up to 300 °C (stage I); then, it begins to decrease up to ≈400 °C (stage II), where upon it stabilizes up to ≈550 °C (stage III). Upon re-irradiation under exactly the same conditions and repeating the annealing process, the increase of the VO signal in stage I disappears. The phenomenon is ascribed to the existence of defect aggregates labeled as Xi centers which are correlated with (impurity-defect) clusters that compete with Oi in capturing vacancies. The presence of Xi centers is related to the thermal annealings performed. Comparison of the evolution of VO (828 cm−1) and VO2 (887 cm−1) bands between irradiated and re-irradiat...

[1]  L. G. Fytros,et al.  Isochronal Annealing Studies of the Oxygen–Vacancy Centres in Neutron-Irradiated Si , 1997 .

[2]  J. Poate,et al.  Evolution from point to extended defects in ion implanted silicon , 1997 .

[3]  L. G. Fytros,et al.  Origin of infrared bands in neutron-irradiated silicon , 1997 .

[4]  L. Khirunenko,et al.  Influence Intrinsic Elastic Stresses on the Annealing Processes of Radiation Defects in Silicon , 1993 .

[5]  C. A. Londos,et al.  Defect states in electron-bombarded n-type silicon , 1989 .

[6]  Svensson Bg,et al.  Kinetic study of the 830- and 889-cm-1 infrared bands during annealing of irradiated silicon. , 1986 .

[7]  O. Awadelkarim,et al.  Deep‐level transient spectroscopy and photoluminescence studies of electron‐irradiated Czochralski silicon , 1986 .

[8]  J. Corbett,et al.  A study of the annealing of the 830 cm-1 IR band observed in electron-irradiated silicon , 1986 .

[9]  V. A. Kharchenko,et al.  The Defect Accumulation and Irradiation-Induced Lattice Strain in Si at High-Dose Neutron Irradiation , 1983, February 16.

[10]  A. Ramdas,et al.  INFRARED ABSORPTION SPECTRA OF OXYGEN-DEFECT COMPLEXES IN IRRADIATED SILICON , 1966 .

[11]  G. D. Watkins,et al.  NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON , 1964 .

[12]  H. Frisch,et al.  Mechanism of the Formation of Donor States in Heat-Treated Silicon , 1958 .

[13]  M. O. Manasreh,et al.  Isochronal annealing of local vibrational modes in proton‐ and deuteron‐implanted InP , 1993 .

[14]  K. V. Ravi,et al.  Imperfections and impurities in semiconductor silicon , 1981 .