수직 채널을 갖는 4-비트 SONOS 노어 플래시 메모리

We proposed a vertical 4-bit SONOS NOR flash memory. This structure has the vertical channel, so it can be possible to have a long channel without extra cell area. Also, we can avoid second-bit effect and short channel effect. And the proposed array structure is based on three-dimensional integration. Thus, we can obtain NOR flash memory having 1.5F²/bit cell size.