论文信息 - Dislocation Revelation and Categorization for Thick Free-Standing GaN Substrates Grown by HVPE

Dislocation Revelation and Categorization for Thick Free-Standing GaN Substrates Grown by HVPE

Threading dislocations (TDs) in an HVPE-grown free-standing GaN substrate have been studied by means of etch pit method using molten KOH+Na2O2 solution, cathodoluminescence (CL) mapping and transmission electron microscopy (TEM). We have focused on the correlation between (1) Burgers vectors of TDs, (2) their appearances as dark spots in CL image, and (3) geometries of corresponding etch pits. Based on the above results, dislocation categorization for GaN by using etch pits or CL is discussed.

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