论文信息 - mLogic: All spin logic device and circuits

mLogic: All spin logic device and circuits

Emerging electronic devices utilizing spin based effects and phenomena, such as spin transfer torque magnetic random access memory (STT-MRAM), have gathered a great spectrum of effort, ranging from basic scientific research to technology development [1][2][3][4]. In this talk, we present a novel all spin logic circuits, referred to as mLogic, based on a four terminal device, referred to as mCell, that utilizes Spin Hall Effect (SHE) along with Dzyaloshinskii-Moriya-Interaction (DMI) at metallic interfaces for its operation [5].

[1] G. Beach,et al. Current-driven dynamics of chiral ferromagnetic domain walls. , 2013, Nature materials.

[2] L. Pileggi,et al. Experimental demonstration of four-terminal magnetic logic device with separate read- and write-paths , 2014, 2014 IEEE International Electron Devices Meeting.

[3] S. Datta,et al. Proposal for an all-spin logic device with built-in memory. , 2010, Nature nanotechnology.

[4] Jian-Gang Zhu,et al. Magnetoresistive Random Access Memory: The Path to Competitiveness and Scalability , 2008, Proceedings of the IEEE.

[5] D. Ralph,et al. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum , 2012, Science.