论文信息 - Absorption constant of Pb1−xSnxTe and Hg1−xCdxTe alloys☆

Absorption constant of Pb1−xSnxTe and Hg1−xCdxTe alloys☆

Abstract Equations are derived for the absorption constant of Pb 1− x Sn x Te (LTT) and Hg 1− x Cd x ,Te (HCT) including the Burstein-Moss shift of the absorption edge. The equations are given in terms of the k−p band structure parameters appropriate to the two alloy systems. Comparison of calculated absorption spectra with experimental values reported to date indicate satisfactory agreement. Some new approximate relations are given for calculating the Fermi level in n -type HCT in either the degenerate or classical carrier concentration regime.

W. Anderson | W. W. Anderson

[1] W. Anderson. Tunnel contribution to Hg1−xCdxTe and Pb1−xSnxTe p−n junction diode characteristics , 1980 .

[2] S. Senturia,et al. k→·p→Model for the Magnetic Energy Levels in PbTe andPb1−xSnxTe , 1973 .

[3] E. Kane,et al. Band structure of indium antimonide , 1957 .

[4] C. Ratliff,et al. Numerical Tabulation of Integrals of Fermi Functions Using k lim →·p lim → Density of States , 1971 .

[5] T. Harman,et al. Band Structure of HgSe and HgSe–HgTe Alloys , 1961 .

[6] S. Senturia,et al. Nuclear-Magnetic-Resonance Studies in PbTe andPb1−xSnxTe: An Experimental Determination ofk→·p→Band Parameters and Magnetic Hyperfine Constants , 1973 .

[7] W. Anderson. Gain-frequency-current relation for Pb 1-x Sn x Te double heterostructure lasers , 1977 .

[8] Y. Guldner,et al. Magnetooptical Investigation of Hg1‐xCdxTe Mixed Crystals II.Semiconducting Configuration and Semimetal → Semiconductor Transition , 1977 .

[9] B. Ellis. The spectral response of Pb/SnTe detectors , 1977 .

[10] M. D. Blue. Optical Absorption in HgTe and HgCdTe , 1964 .

[11] W. W. Scanlon,et al. Recent advances in the optical and electronic properties of PbS, PbSe, PbTe and their alloys , 1959 .

[12] J. Schmit,et al. Temperature and Alloy Compositional Dependences of the Energy Gap of Hg1−xCdxTe , 1969 .