ZnSe and ZnO film growth by pulsed-laser deposition

[1]  S. Setzler,et al.  Observation of singly ionized selenium vacancies in ZnSe grown by molecular beam epitaxy , 1997 .

[2]  N. Fujimura,et al.  Effect of Ce doping on the growth of ZnO thin films , 1997 .

[3]  J. Horwitz,et al.  X-RAY CHARACTERIZATION OF EXTREMELY HIGH QUALITY (SR,BA)TIO3 FILMS GROWN BY PULSED LASER DEPOSITION , 1995 .

[4]  Ian W. Boyd,et al.  Characteristics of high quality ZnO thin films deposited by pulsed laser deposition , 1994 .

[5]  H. Kwok,et al.  Crystalline phases of II‐VI compound semiconductors grown by pulsed laser deposition , 1994 .

[6]  Ian W. Boyd,et al.  Low temperature growth of highly transparent c-axis oriented ZnO thin films by pulsed laser deposition , 1994 .

[7]  I. Lin,et al.  Growth Behavior of Y 1 B a 2 C u 3 O 7-x Superconducting Thin Films Using Laser Ablation Technique , 1994 .

[8]  Hong Koo Kim,et al.  Thermally stable ZnO films deposited on GaAs substrates with a SiO2 thin buffer layer , 1992 .

[9]  J. Madden,et al.  Growth of HgCdTe epilayers with any predesigned compositional profile by laser molecular beam epitaxy , 1987 .

[10]  T. Yao,et al.  The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAs , 1987 .

[11]  M. Mizuta,et al.  Coherent Growth of ZnSe on GaAs by MOCVD , 1985 .

[12]  J. Dubowski,et al.  Epitaxial growth of (100)CdTe on (100)GaAs induced by pulsed laser evaporation , 1985 .

[13]  Robert Zannetti,et al.  Landolt-bornstein, new series , 1974 .