论文信息 - Effect of Pressure on the Energy Gap of Bi2Te3

Effect of Pressure on the Energy Gap of Bi2Te3

The effect of hydrostatic pressure on the energy gap of Bi2Te3 has been investigated in the pressure range one to 30 000 atm. From resistivity measurements as a function of temperature and pressure, it has been determined that the energy gap decreases from 0.171 ev at one atmosphere to 0.104 ev at 30 000 atm, corresponding to ∂Eg(0)/∂p=−2×10−6 ev/atm.

Che-yu Li | A. Ruoff | C. W. Spencer

[1] E. Kirk,et al. Device for Measurement of the Electrical Properties of Bi2Se3 at Elevated Temperatures , 1960 .

[2] Robert W. Keyes,et al. The Effects of Elastic Deformation on the Electrical Conductivity of Semiconductors , 1960 .

[3] L. Neuringer. Effect of Pressure on the Infrared Absorption of Semiconductors , 1959 .

[4] W. Paul. The effect of pressure on the properties of germanium and silicon , 1959 .

[5] I. Austin,et al. The Optical Properties of Bismuth Telluride , 1958 .

[6] M. Francombe. Structure-cell data and expansion coefficients of bismuth telluride , 1958 .

[7] C. Goodman,et al. Chemical bonding in bismuth telluride , 1958 .

[8] C. Satterthwaite,et al. Electrical and Thermal Properties of Bi 2 Te 3 , 1957 .

[9] J. Reitz. Electronic Band Structure of Selenium and Tellurium , 1957 .

[10] T. Harman,et al. Preparation and some physical properties of Bi2Te3, Sb2Te3, and As2Te3 , 1957 .

[11] E. Conwell,et al. Electrical and optical properties of some M2v−bN3vi−b semiconductors , 1957 .

[12] Julius H. Taylor. Pressure Dependence of the Resistivity, Hall Coefficient, and Energy Gap for InAs , 1955 .

[13] R. Keyes. Effect of Pressure on the Electrical Conductivity of InSb , 1955 .

[14] William Paul,et al. Pressure Dependence of the Resistivity of Silicon , 1955 .

[15] R. Keyes. The Electrical Properties of Black Phosphorus , 1953 .