论文信息 - Markov model for threshold-voltage shift in amorphous silicon TFTs for variable gate bias

Markov model for threshold-voltage shift in amorphous silicon TFTs for variable gate bias

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are widely used in active matrix displays and sensors, in which their operation is typically analog in nature. However, the TFT experiences a V/sub T/ shift with time under gate bias, and the need for a model of the V/sub T/ shift with variable gate bias is imperative for robust circuit design. A model for the V/sub T/ shift under constant and variable gate bias has been presented and agrees with measurement results. The developed model can be easily represented by circuit elements and incorporated into a circuit simulator. As a proof of concept, we use the model to predict the transients of a weighted voltage subtractor circuit.

[1] Jackson,et al. Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen. , 1987, Physical review. B, Condensed matter.

[2] A. Nathan,et al. Highly conductive n+ hydrogenated microcrystalline silicon and its application in thin film transistors , 2004 .

[4] Powell,et al. Defect pool in amorphous-silicon thin-film transistors. , 1992, Physical review. B, Condensed matter.

[5] M. J. Powell. The physics of amorphous-silicon thin-film transistors , 1989 .

[6] Jerzy Kanicki,et al. Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors , 1993 .

[7] Jerzy Kanicki,et al. Bias-Stress-Induced Stretched-Exponential Time Dependence of Charge Injection and Trapping in Amorphous Silicon Thin-Film Transistors , 1992 .

[8] Safa Kasap,et al. X-ray detector with on-pixel amplification for large area diagnostic medical imaging , 2003 .

[9] A. Nathan,et al. Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic , 2004, IEEE Journal of Solid-State Circuits.