A completely integrated single-chip phase-locked loop with a 15 GHz VCO using 0.2 /spl mu/m E-/D-HEMT-technology
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[1] M. Rieger-Motzer,et al. 30 GHz static frequency divider using a 0.2 /spl mu/m AlGaAs/GaAs/AlGaAs HEMT technology , 1995 .
[2] C. Dourlens,et al. Highly integrated and compact W-band front-end for radiometry application , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.
[3] Hiroshi Okazaki,et al. An MMIC chip set for a V-band phase-locked local oscillator , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.
[4] M. Schlechtweg,et al. Monolithic integrated 75 GHz oscillator with high output power using a pseudomorphic HFET , 1994, Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.
[5] Behzad Razavi,et al. A 6 GHz 68 mW BiCMOS phase-locked loop , 1994 .
[6] T. Jakobus,et al. E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits , 1990 .
[7] Behzad Razavi,et al. A 6 GHz 60 mW BiCMOS phase-locked loop with 2 V supply , 1994, Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.