论文信息 - Specific contact resistivity of TiSi2to P+and n+junctions

Specific contact resistivity of TiSi2to P+and n+junctions

Specific contact resistivities of the Al/TiW/TiSi<inf>2</inf>/Si system are characterized. It is found that without a TiW barrier layer, Al can penetrate through the TiSi<inf>2</inf>layer and significantly affect the TiSi<inf>2</inf>/Si interfacial contact resistance. Intrinsic TiSi<inf>2</inf>contact resistivities to n+and p+silicon are characterized with a TiW barrier between the silicide and the aluminum. TiSi<inf>2</inf>contact resistivity to n+silicon is found to be about one order of magnitude lower than that of Al to n+silicon. However, TiSi<inf>2</inf>to p+silicon contact resistivity is higher than that of Al to p+silicon and is very sensitive to the boron implant dose.

[1] Theodore I. Kamins,et al. Device Electronics for Integrated Circuits , 1977 .

[2] A. Yu,et al. Electron tunneling and contact resistance of metal-silicon contact barriers , 1970 .

[3] Chun-Yen Chang,et al. Specific contact resistance of metal-semiconductor barriers , 1971 .

[4] L. W. Linholm,et al. A direct measurement of interfacial contact resistance , 1982, IEEE Electron Device Letters.

[5] Shyam P Murarka,et al. Silicides for VLSI Applications , 1983 .

[6] C. Ting,et al. Investigation of the Al/TiSi2/Si contact system , 1983 .

[7] Y. See,et al. Titanium disilicide self-aligned source/drain + gate technology , 1982, 1982 International Electron Devices Meeting.