论文信息 - Subthreshold current of dual-gate MOSFET's

Subthreshold current of dual-gate MOSFET's

The subthreshold conduction in dual-gate MOS transistors is investigated. The subthreshold current is calculated both in the long-channel case and the short-channel case by means of simple models. Good agreement is found between theory and experimental results obtained through measurements on overlapping-gate n-channel devices. As an application of the subthreshold current analysis, the low-frequency transfer inefficiency in bucket-brigade devices (BBD's) is evaluated. The theoretical result agrees well with measurements carried out on p-channel nonoverlapping-gate devices.

R.M. Barsan

[1] R.M. Barsan. Dual-gate bucket-brigade devices , 1980, IEEE Transactions on Electron Devices.

[2] S.G. Chamberlain,et al. Modeling and experimental simulation of the low-frequency transfer inefficiency in bucket-brigade devices , 1980, IEEE Transactions on Electron Devices.

[3] M. B. Barron. Low level currents in insulated gate field effect transistors , 1972 .

[4] W.P. Noble. Short channel effects in dual gate field effect transistors , 1978, 1978 International Electron Devices Meeting.

[5] R.M. Barsan,et al. Analysis and modeling of dual-gate MOSFET's , 1981, IEEE Transactions on Electron Devices.

[6] R. Troutman. Subthreshold design considerations for insulated gate field-effect transistors , 1973 .

[7] G.W. Taylor,et al. A survey of high-density dynamic RAM cell concepts , 1979, IEEE Transactions on Electron Devices.

[8] R. Troutman,et al. Subthreshold characteristics of insulated-gate field-effect transistors , 1973 .