Experimental Assessment of a Broadband Current Sensor based on the X-Hall Architecture

The X-Hall sensor is presented, characterized and proposed as a viable architecture for silicon-integrated, broadband, current/magnetic-field measurements. The X-Hall architecture overcomes the methodological bandwidth limit of state-of-the-art Hall-effect sensors by replacing the typically used spinning-current technique with a DC bias-based, passive offset compensation technique, which is less effective from an absolute standpoint but presents the key feature of being frequency independent.Three different prototypes have been realized and experimentally characterized in both static and dynamic operation. Static characterization demonstrates a competitively low residual offset of the X-Hall sensor with respect to spun Hall sensors operated at high frequency. Even though physical simulations reveal a theoretical bandwidth limit set at 200 MHz for the X-Hall sensor, experimental dynamic characterization on the prototypes identifies the presence of additive dynamic perturbations limiting the sensor bandwidth, which are attributable to technology issues in the practical implementation of the prototypes. Nevertheless, it is possible to compensate these perturbations through a vector differential measurement model, so that a bandwidth of 4 MHz is demonstrated, which is the broadest bandwidth ever achieved by a purely Hall-effect based sensor, to the best of knowledge of the authors.

[1]  M. Tartagni,et al.  Bandwidth Limits in Hall Effect-based Current Sensors , 2017 .

[2]  Marco Marchesi,et al.  A Broadband, On-Chip Sensor Based on Hall Effect for Current Measurements in Smart Power Circuits , 2018, IEEE Transactions on Instrumentation and Measurement.

[3]  Ke-Horng Chen,et al.  Power-Tracking Embedded Buck–Boost Converter With Fast Dynamic Voltage Scaling for the SoC System , 2012, IEEE Transactions on Power Electronics.

[4]  M. Tartagni,et al.  Bandwidth enhancement in Hall probe by X-Hall DC biasing , 2018, Journal of Physics: Conference Series.

[5]  Kofi A. A. Makinwa,et al.  Multipath Wide-Bandwidth CMOS Magnetic Sensors , 2017, IEEE Journal of Solid-State Circuits.

[6]  Marco Tartagni,et al.  Optimum Design Rules for CMOS Hall Sensors , 2017, Sensors.

[7]  Mario Motz,et al.  A Fast T&H Overcurrent Detector for a Spinning Hall Current Sensor With Ping-Pong and Chopping Techniques , 2019, IEEE Journal of Solid-State Circuits.

[8]  Samuel Huber,et al.  A Fully Integrated Analog Compensation for the Piezo-Hall Effect in a CMOS Single-Chip Hall Sensor Microsystem , 2015, IEEE Sensors Journal.

[9]  Siew-Chong Tan,et al.  A Gallium Nitride (GaN)-Based Single-Inductor Multiple-Output (SIMO) Inverter With Multi-Frequency AC Outputs , 2019, IEEE Transactions on Power Electronics.

[10]  A. Udo Limits of offset cancellation by the principle of spinning current Hall probe , 2004, Proceedings of IEEE Sensors, 2004..

[11]  Aldo Romani,et al.  Physical simulations of response time in Hall sensor devices , 2014, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS).

[12]  P.J.A. Munter A low-offset spinning-current hall plate , 1990 .

[13]  S. El-Ahmar,et al.  Double Hall sensor structure reducing voltage offset. , 2017, The Review of scientific instruments.

[14]  Vincent Mosser,et al.  A Spinning Current Circuit for Hall Measurements Down to the Nanotesla Range , 2017, IEEE Transactions on Instrumentation and Measurement.

[15]  Kofi A. A. Makinwa,et al.  11.3 A hybrid multipath CMOS magnetic sensor with 210µTrms resolution and 3MHz bandwidth for contactless current sensing , 2016, 2016 IEEE International Solid-State Circuits Conference (ISSCC).

[16]  Tobias Funk,et al.  A fully integrated DC to 75 MHz current sensing circuit with on-chip Rogowski coil , 2018, 2018 IEEE Custom Integrated Circuits Conference (CICC).