Operation Of Integrating Indium Antimonide Linear Arrays At 65 K And Below

The combination of a FET switch non-CCD readout architecture with high-quality mesa photovoltaic indium antimonide detector material has led to high-performance integrating linear imagers in the 1- to 5-pm region. These devices operate in the temperature regime below 100 K and provide very good dark current and responsivity uniformity (±2%). Test data will show performance at 65 K for a 512-element array and 46 K for a 128-element array. Useful integration times of 3600 seconds at 46 K and >12 seconds at 65 K have been achieved. kTC read noise levels of less than 1200 electrons have been measured for both devices.