论文信息 - Characterization of erbium-silicided Schottky diode junction

Characterization of erbium-silicided Schottky diode junction

Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5/spl times/10/sup 13/ traps/cm/sup 2/, 3.75 ms and 0.76 eV, respectively. By using the developed method, the interface of the Schottky diode can be evaluated quantitatively.

Jae-Heon Shin | Yarkyeon Kim | Moongyu Jang | Seongjae Lee

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