Exploring resistive switching‐based memristors in the charge–flux domain: A modeling approach

Summary We analyzed resistive switching-based memristors by using the charge–flux relations instead of the traditional current–voltage approach. We employed simulated and experimental data to develop a model that can be easily included in circuit simulators. Physical simulations of devices with different conductive filament sizes were employed to fit the 3-parameter model introduced. Later on, the relations between the model parameters and the conductive filament geometrical features were characterized in-depth. In addition, a model to obtain the energy employed in the reset process was presented. Finally, we used the model to estimate the experimental conductive filament radius distribution using a set of 3000 reset cycles. Copyright © 2017 John Wiley & Sons, Ltd.

[1]  Xing Wu,et al.  Intrinsic nanofilamentation in resistive switching , 2013 .

[2]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[3]  F. Campabadal,et al.  Analysis of the Switching Variability in $\hbox{Ni/HfO}_{2}$-Based RRAM Devices , 2014, IEEE Transactions on Device and Materials Reliability.

[4]  Jishen Zhao,et al.  Emerging Memory Technologies , 2019, IEEE Micro.

[5]  Leon O. Chua.  Resistance switching memories are memristors , 2011 .

[6]  Jordi Suñé,et al.  An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs , 2015 .

[7]  Leon O. Chua,et al.  A Theoretical Approach to Memristor Devices , 2015, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.

[8]  Christos Papavassiliou,et al.  A Memristor SPICE Model Accounting for Volatile Characteristics of Practical ReRAM , 2014, IEEE Electron Device Letters.

[9]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[10]  J. B. Roldan,et al.  Exploring ReRAM-based memristors in the charge-flux domain, a modeling approach , 2015, 2015 International Conference on Memristive Systems (MEMRISYS).

[11]  S. Balatti,et al.  Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling , 2012, IEEE Transactions on Electron Devices.

[12]  Francisco Jimenez-Molinos,et al.  Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching Based Memristors , 2015, ArXiv.

[13]  L. Chua.  Memristor-The missing circuit element , 1971 .

[14]  R. Degraeve,et al.  Hourglass concept for RRAM: A dynamic and statistical device model , 2014, Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

[15]  Jordi Suñé,et al.  Simulation of thermal reset transitions in resistive switching memories including quantum effects , 2014 .

[16]  L.O. Chua,et al.  Memristive devices and systems , 1976, Proceedings of the IEEE.

[17]  E. Miranda,et al.  Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions , 2010, IEEE Electron Device Letters.

[18]  Sung-Mo Kang,et al.  Compact Models for Memristors Based on Charge-Flux Constitutive Relationships , 2010, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[19]  Georgios Ch. Sirakoulis,et al.  SPICE modeling of nonlinear memristive behavior , 2015, Int. J. Circuit Theory Appl..

[20]  J. B. Roldan,et al.  An analytical energy model for the reset transition in unipolar resistive-switching RAMs , 2016, 2016 18th Mediterranean Electrotechnical Conference (MELECON).

[21]  Ee Wah Lim,et al.  Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey , 2015 .

[22]  C. Muller,et al.  Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories , 2011 .

[23]  S. Long,et al.  An in-depth simulation study of thermal reset transitions in resistive switching memories , 2013 .

[24]  Cheng-Chung Lee,et al.  The Current Trends of Optics and Photonics , 2015 .

[25]  S. Long,et al.  A comprehensive analysis on progressive reset transitions in RRAMs , 2014 .