A physics-based low frequency noise model for MOSFETs under periodic large signal excitation

In recent years several publications have reported reductions in the low frequency noise of MOSFETs under large signal excitation. These observations are important for modern analog and RF circuits. The classically used low frequency noise models for circuit simulation are not able to explain this effect. In this paper, we extend the classical approach to non-equilibrium biasing conditions and give a device-physics based explanation for the noise amplitude reduction. In addition, we present measurements which are in good agreement with the derived model, and suggest approaches to implement the model within standard compact models.

[1]  I. Lundström,et al.  Low frequency noise in MOS transistors—I Theory , 1968 .

[2]  Charles G. Sodini,et al.  A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon , 1989 .

[3]  Hsiang,et al.  Theory and experiment on the 1/f gamma noise in p-channel metal-oxide-semiconductor field-effect transistors at low drain bias. , 1986, Physical review. B, Condensed matter.

[4]  Doris Schmitt-Landsiedel,et al.  A Complementary Switched MOSFET Architecture for the 1/f Noise Reduction in Linear Analog CMOS ICs , 2007, IEEE Journal of Solid-State Circuits.

[5]  Eddy Simoen,et al.  The decrease of ‘‘random telegraph signal’’ noise in metal‐oxide‐semiconductor field‐effect transistors when cycled from inversion to accumulation , 1992 .

[6]  Gijs Bosman,et al.  Comprehensive noise performance of ultrathin oxide MOSFETs at low frequencies , 2004 .

[7]  C. Hu,et al.  A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .

[8]  G. Ghibaudo,et al.  Impact of scaling down on low frequency noise in silicon MOS transistors , 1992 .

[9]  Y. Nemirovsky,et al.  1/ f noise reduction of metal‐oxide‐semiconductor transistors by cycling from inversion to accumulation , 1991 .

[10]  Marc Tiebout,et al.  Low Frequency Noise Considerations for CMOS Analog Circuit Design , 2005 .

[11]  E. Klumperink,et al.  Reducing MOSFET 1/f noise and power consumption by switched biasing , 1999, IEEE Journal of Solid-State Circuits.

[12]  H. Wallinga,et al.  Modeling of RTS noise in MOSFETs under steady-state and large-signal excitation , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[13]  R. Kingston,et al.  Semiconductor surface physics , 1957 .

[14]  A. Gamal,et al.  Analysis of 1/f noise in switched MOSFET circuits , 2001 .

[15]  R. Thewes,et al.  Fluctuations of the low frequency noise of MOS transistors and their modeling in analog and RF-circuits , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).