Channel Hot Carriers in SiGe and Ge pMOSFETs

In this chapter we discuss Channel Hot Carrier (CHC) degradation in high-mobility SiGe and Ge channel pMOSFETs. For Si technologies this degradation mode is of relevance for n-channel devices, while it is often neglected for p-channel devices whose reliability is typically limited by Negative Bias Temperature Instability (NBTI). However, for Ge-based p-channel, hot carrier effects are expected to worsen due to higher hole mobility and reduced channel bandgap enhancing impact ionization.

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