Compact Analytical Threshold Voltage Model for Nanoscale Multi-Layered-Gate Electrode Workfunction Engineered Recessed Channel (MLGEWE-RC) MOSFET

In this paper, a compact analytical threshold voltage model for multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) MOSFET is presented and investigated using ATLAS device simulator. The novel device integrates the merits of recessed channel, gate electrode workfunction engineered (GEWE) architecture and multi-layered gate dielectric design. Our model includes the evaluation of surface potential, electric field distribution along the channel and threshold voltage. We demonstrate that MLGEWE-RC MOSFET design exhibits significant enhancement in terms of improved hot carrier effect immunity, carrier transport efficiency and reduced short channel effects (SCEs) proving its efficacy for high-speed integration circuits and analog design. The accuracy of the results obtained using our analytical model is verified using 2-D device simulations.