论文信息 - A 123μW standby power technique with EM-tolerant 1.8V I/O NMOS power switch in 28nm HKMG technology

A 123μW standby power technique with EM-tolerant 1.8V I/O NMOS power switch in 28nm HKMG technology

We have developed a power-gating technique for a mobile processor in 28-nm HKMG technology. The proposed EM-tolerant 1.8V I/O NMOS power switch reduces the standby power to 1/641× and achieves 79% channel utilization without weakening EM immunity. The active leakage power of the dual CPU cores can be reduced by 45 mW in a single core operation mode with a rapid 1.4-μs wakeup time to full core operation. A mobile processor is designed and fabricated with proposed technique. Estimated standby power of the chip is 123 μW, resulting in one order of magnitude reduction compared to the conventional techniques. Measured leakage power shows a good agreement with the estimated one.

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