A Critical Review on Reliability and Short Circuit Robustness of Silicon Carbide Power MOSFETs

[1]  D. Nirmal,et al.  Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review , 2022, Micro and Nanostructures.

[2]  B. Shen,et al.  Steady-state over-current safe operation area (SOA) of the SiC MOSFET at cryogenic and room temperatures , 2022, Cryogenics.

[3]  Wuhua Li,et al.  A Modified RC Snubber With Coupled Inductor for Active Voltage Balancing of Series-Connected SiC MOSFETs , 2021, IEEE Transactions on Power Electronics.

[4]  Peng Liu,et al.  Demonstration of non-negligible oxygen exchange in the thermal oxidation of silicon carbide , 2021 .

[5]  Weifeng Sun,et al.  1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect , 2021, Microelectronics Reliability.

[6]  L. Phung,et al.  Recent review on failures in silicon carbide power MOSFETs , 2021 .

[7]  Dushan Boroyevich,et al.  Power Cell Design and Assessment Methodology Based on a High-Current 10-kV SiC MOSFET Half-Bridge Module , 2021, IEEE Journal of Emerging and Selected Topics in Power Electronics.

[8]  Ajit Kanale,et al.  Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology , 2021, IEEE Transactions on Power Electronics.

[9]  Peng Lu,et al.  A high-accuracy switching loss model of SiC MOSFETs in a motor drive for electric vehicles , 2021 .

[10]  Wenjie Chen,et al.  Common-Mode EMI Mathematical Modeling Based on Inductive Coupling Theory in a Power Module With Parallel-Connected SiC MOSFETs , 2021, IEEE Transactions on Power Electronics.

[11]  Wenjie Chen,et al.  Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications , 2021, IEEE Transactions on Power Electronics.

[12]  M. L. Alles,et al.  Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs , 2021, IEEE Transactions on Nuclear Science.

[13]  P. Diaz Reigosa,et al.  Short-circuit robustness of retrograde channel doping 1.2 kV SiC MOSFETs , 2021 .

[14]  Aditi Agarwal,et al.  Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices , 2021, IEEE Transactions on Power Electronics.

[15]  Homer Alan Mantooth,et al.  Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior , 2021, IEEE Transactions on Power Electronics.

[16]  T. Kimoto,et al.  Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation , 2021, Applied Physics Express.

[17]  L. Dehimi,et al.  Simulation Study of Carbon Vacancy Trapping Effect on Low Power 4H-SiC MOSFET Performance , 2021, Silicon.

[18]  L. Tan,et al.  Analysis, Design, and Implementation of Junction Temperature Fluctuation Tracking Suppression Strategy for SiC MOSFETs in Wireless High-Power Transfer , 2021, IEEE Transactions on Power Electronics.

[19]  C. Bongiorno,et al.  Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations , 2020, 2012.08829.

[20]  B. Jayant Baliga,et al.  Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement , 2021, IEEE Access.

[21]  T. Huiskamp,et al.  Ultrafast Switching of SiC MOSFETs for High-Voltage Pulsed-Power Circuits , 2020, IEEE Transactions on Plasma Science.

[22]  W. Bahng,et al.  TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing , 2020 .

[23]  L. Fursin,et al.  Impact of 0.9 MeV electron irradiation on main properties of high voltage vertical power 4H-SiC MOSFETs , 2020 .

[24]  Ming Li,et al.  Design and Fabrication of 4H-Sic Mosfets with Optimized JFET and p-Body Design , 2020 .

[25]  Yingsan Geng,et al.  Multiple failure mode identification of SiC planar MOSFETs in short-circuit operation , 2020 .

[26]  K. Wada,et al.  Accelerated aging test for gate-oxide degradation in SiC MOSFETs for condition monitoring , 2020 .

[27]  F. Iannuzzo,et al.  Effect of short-circuit degradation on the remaining useful lifetime of SiC MOSFETs and its failure analysis , 2020 .

[28]  F. Velardi,et al.  Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET , 2020 .

[29]  Frede Blaabjerg,et al.  Parameters sensitivity analysis of silicon carbide buck converters to extract features for condition monitoring , 2020 .

[30]  F. D. Corte,et al.  Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions , 2020, Applied Physics A.

[31]  M. Mehrad.  Inserting Different Charge Regions in Power MOSFET for Achieving High Performance of the Electrical Parameters , 2020, Silicon.

[32]  S. El-ghanam,et al.  Comparative study of gallium nitride and silicon carbide MOSFETs as power switching applications under cryogenic conditions , 2020 .

[33]  Yaogang Hu,et al.  Fault protection for a SiC MOSFET based on gate voltage subjected to short circuit type II , 2020 .

[34]  S. Jang,et al.  Improved on-state resistance with reliable reverse characteristics in 1.2 kV 4H-SiC MOSFET by selective nitrogen implantation assisted current spreading layer , 2020, Japanese Journal of Applied Physics.

[35]  Kecheng Zhang,et al.  SiC MOSFETs Gate Driver With Minimum Propagation Delay Time and Auxiliary Power Supply With Wide Input Voltage Range for High-Temperature Applications , 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics.

[36]  Chenxi Fei,et al.  Influences of pre-oxidation nitrogen implantation and post-oxidation annealing on channel mobility of 4H-SiC MOSFETs , 2020 .

[37]  Jianhua Wang,et al.  Gate Failure Physics of SiC MOSFETs Under Short-Circuit Stress , 2020, IEEE Electron Device Letters.

[38]  L. Knoll,et al.  Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs , 2019, Materials Science Forum.

[39]  P. Losee,et al.  Optimization of 1700V SiC MOSFET for Short Circuit Ruggedness , 2019, Materials Science Forum.

[40]  S. Bhattacharya,et al.  Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs , 2019, Materials Science Forum.

[41]  R. Burgos,et al.  Investigating Impact of Emerging Medium-Voltage SiC MOSFETs on Medium-Voltage High-Power Industrial Motor Drives , 2019, IEEE Journal of Emerging and Selected Topics in Power Electronics.

[42]  F. D. Corte,et al.  Temperature and SiO2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs , 2019, Applied Physics A.

[43]  A. Hallén,et al.  An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss , 2019, IEEE Transactions on Electron Devices.

[44]  Hui Li,et al.  Voltage Overshoot Suppression for SiC MOSFET-Based DC Solid-State Circuit Breaker , 2019, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[45]  Xiaojie Wu,et al.  Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules , 2019, IEEE Transactions on Power Electronics.

[46]  Bo Zhang,et al.  Design and simulation on improving the reliability of gate oxide in SiC CDMOSFET , 2019, Diamond and Related Materials.

[47]  R. Chaujar.  Analog and RF assessment of sub-20 nm 4H-SiC trench gate MOSFET for high frequency applications , 2019, AEU - International Journal of Electronics and Communications.

[48]  J. Kolar,et al.  Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs , 2018, CPSS Transactions on Power Electronics and Applications.

[49]  Il Hwan Cho,et al.  Development of high temperature operation silicon based MOSFET for harsh environment application , 2018, Results in Physics.

[50]  Bai Song,et al.  4H-SiC trench MOSFET with splitting double-stacked shielded region , 2018, Superlattices and Microstructures.

[51]  Zheng Zeng,et al.  Comparative Study on Multiple Degrees of Freedom of Gate Drivers for Transient Behavior Regulation of SiC MOSFET , 2018, IEEE Transactions on Power Electronics.

[52]  Francesco Iannuzzo,et al.  Aalborg Universitet Investigation on the degradation indicators of short-circuit tests in 1 . 2 kV SiC MOSFET power modules , 2018 .

[53]  Hervé Morel,et al.  Measurement and analysis of SiC-MOSFET threshold voltage shift , 2018, Microelectron. Reliab..

[54]  A. Lelis,et al.  Short-Circuit Robustness of SiC Trench MOSFETs , 2018 .

[55]  S. Hino,et al.  Suppression of Short-Circuit Current with Embedded Source Resistance in SiC-MOSFET , 2018, Materials Science Forum.

[56]  K. Matocha,et al.  Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry , 2018, Materials Science Forum.

[57]  Siva Kotamraju,et al.  Improved device characteristics obtained in 4H-SiC MOSFET using high-k dielectric stack with ultrathin SiO2-AlN as interfacial layers , 2018, Materials Science in Semiconductor Processing.

[58]  Hirotaka Otake,et al.  A Fanless Operating Trans-Linked Interleaved 5 kW Inverter Using SiC MOSFETs to Achieve 99% Power Conversion Efficiency , 2018, IEEE Transactions on Industrial Electronics.

[59]  J. Urresti,et al.  Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO2 / Al2O3 Gate Stack , 2018, IEEE Electron Device Letters.

[60]  Stephen B. Bayne,et al.  Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET , 2018, Microelectron. Reliab..

[61]  Donglai Zhang,et al.  High Dynamic Performance Solar Array Simulator Based on a SiC MOSFET Linear Power Stage , 2018, IEEE Transactions on Power Electronics.

[62]  Gregor Pobegen,et al.  Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs , 2018, Microelectron. Reliab..

[63]  Dushan Boroyevich,et al.  Characterization and performance evaluation of state-of-the-art 3.3 kV 30 a full-SiC MOSFETs , 2019, 2017 IEEE Energy Conversion Congress and Exposition (ECCE).

[64]  Philippe Godignon,et al.  Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review , 2017 .

[65]  Yvan Avenas,et al.  Comparison of the electro-thermal constraints on SiC MOSFET and Si IGBT power modules in photovoltaic DC/AC inverters , 2017, Microelectron. Reliab..

[66]  Hui Li,et al.  Changes and challenges of photovoltaic inverter with silicon carbide device , 2017 .

[67]  Hong Guo,et al.  Effects of silicon carbide MOSFETs on the efficiency and power quality of a microgrid-connected inverter , 2017 .

[68]  B. Zhang,et al.  A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs , 2017 .

[69]  Frédéric Richardeau,et al.  Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation , 2017, Microelectron. Reliab..

[70]  Ulrike Grossner,et al.  Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs , 2017, Microelectron. Reliab..

[71]  Olayiwola Alatise,et al.  Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs , 2017, Microelectron. Reliab..

[72]  F. Fouquet,et al.  Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET , 2017, Microelectron. Reliab..

[73]  H. Yano,et al.  Investigation of Robustness Capability of −730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications , 2017, IEEE Transactions on Electron Devices.

[74]  Thomas Santini,et al.  Non-homogenous gamma process: Application to SiC MOSFET threshold voltage instability , 2017, Microelectron. Reliab..

[75]  J. M. Rafí,et al.  Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors , 2017 .

[76]  Philippe Godignon,et al.  High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide , 2017, IEEE Transactions on Industrial Electronics.

[77]  Hamidreza Ghorbani,et al.  A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory , 2017, IEEE Transactions on Industrial Electronics.

[78]  Fan Zhang,et al.  Voltage Suppression in Wire-Bond-Based Multichip Phase-Leg SiC MOSFET Module Using Adjacent Decoupling Concept , 2017, IEEE Transactions on Industrial Electronics.

[79]  Chengming Zhang,et al.  Comprehensive comparison between silicon carbide MOSFETs and silicon IGBTs based traction systems for electric vehicles , 2017 .

[80]  Frede Blaabjerg,et al.  A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules , 2017, IEEE Transactions on Industry Applications.

[81]  Dushan Boroyevich,et al.  Characterization and Evaluation of the State-of-the-Art 3.3-kV 400-A SiC MOSFETs , 2017, IEEE Transactions on Industrial Electronics.

[82]  R. Teodorescu,et al.  Short-Circuit Degradation of 10-kV 10-A SiC MOSFET , 2017, IEEE Transactions on Power Electronics.

[83]  Jiangwei Liu,et al.  Design and fabrication of high-performance diamond triple-gate field-effect transistors , 2016, Scientific Reports.

[84]  Hirofumi Yamamoto,et al.  Lifetime estimation of SiC MOSFETs under high temperature reverse bias test , 2016, Microelectron. Reliab..

[85]  Alberto Castellazzi,et al.  Body diode reliability investigation of SiC power MOSFETs , 2016, Microelectron. Reliab..

[86]  Jin Wei,et al.  SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss , 2016, IEEE Electron Device Letters.

[87]  A. Castellazzi,et al.  A Physics-Based Compact Model of SiC Power MOSFETs , 2016, IEEE Transactions on Power Electronics.

[88]  T. Funaki,et al.  Thermal measurement and analysis of packaged SiC MOSFETs , 2016 .

[89]  Sujit Banerjee,et al.  Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers , 2016 .

[90]  P. Mawby,et al.  High Temperature Nitridation of 4H-SiC MOSFETs , 2016 .

[91]  Pascal Bevilacqua,et al.  Repetitive Short-Circuit Tests on SiC VMOS Devices , 2016 .

[92]  Stephen B. Bayne,et al.  Impact of silicon carbide semiconductor technology in Photovoltaic Energy System , 2016 .

[93]  Andrea Irace,et al.  SiC power MOSFETs performance, robustness and technology maturity , 2016, Microelectron. Reliab..

[94]  Zoubir Khatir,et al.  Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions , 2016, Microelectron. Reliab..

[95]  Tetsuzo Ueda,et al.  Reliability of Diode-Integrated SiC Power MOSFET(DioMOS) , 2016, Microelectron. Reliab..

[96]  Philippe Ladoux,et al.  Parallel Connection of 1200-V/100-A SiC-MOSFET Half-Bridge Modules , 2016, IEEE Transactions on Industry Applications.

[97]  L. Tolbert,et al.  Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs , 2016, IEEE Transactions on Power Electronics.

[98]  Cheng Chen,et al.  Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs , 2015, Microelectron. Reliab..

[99]  Cheng-Hao Yu,et al.  An Optimized Structure of 4H-SiC U-Shaped Trench Gate MOSFET , 2015, IEEE Transactions on Electron Devices.

[100]  Leonard C. Feldman,et al.  Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing , 2015 .

[101]  Aivars J. Lelis,et al.  Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs , 2015, IEEE Transactions on Electron Devices.

[102]  Kimimori Hamada,et al.  SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles , 2015, IEEE Transactions on Electron Devices.

[103]  Krishna Shenai,et al.  Simple and Accurate Circuit Simulation Model for SiC Power MOSFETs , 2015, IEEE Transactions on Electron Devices.

[104]  H. Yoshioka,et al.  N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces , 2015 .

[105]  R. Ouaida,et al.  Gate Oxide Degradation of SiC MOSFET in Switching Conditions , 2014, IEEE Electron Device Letters.

[106]  Hiroshi Yano,et al.  Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation , 2014, IEEE Electron Device Letters.

[107]  Andrea Irace,et al.  Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs , 2014, Microelectron. Reliab..

[108]  Michael C. Hamilton,et al.  High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping , 2014, IEEE Electron Device Letters.

[109]  Xueqian Zhong,et al.  High Temperature Stability and the Performance Degradation of SiC MOSFETs , 2014, IEEE Transactions on Power Electronics.

[110]  Li Yang,et al.  High temperature gate-bias and reverse-bias tests on SiC MOSFETs , 2013, Microelectron. Reliab..

[111]  Mounira Berkani,et al.  Robustness of 1.2 kV SiC MOSFET devices , 2013, Microelectron. Reliab..

[112]  Andrea Irace,et al.  Experimental analysis of electro-thermal instability in SiC Power MOSFETs , 2013, Microelectron. Reliab..

[113]  Mauro Ciappa,et al.  A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs , 2013, Microelectron. Reliab..

[114]  F. Giannazzo,et al.  Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3 , 2012 .

[115]  Takashi Hikihara,et al.  Thermal instability effects in SiC Power MOSFETs , 2012, Microelectron. Reliab..

[116]  A. Agarwal,et al.  SiC Power Devices for Microgrids , 2010, IEEE Transactions on Power Electronics.

[117]  J. Suehle,et al.  Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments , 2010, IEEE Transactions on Device and Materials Reliability.

[118]  Hiroshi Yano,et al.  Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide , 2010, IEEE Electron Device Letters.

[119]  M. Shur,et al.  Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures , 2009 .

[120]  Masayuki Imaizumi,et al.  Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs , 2008 .

[121]  Ronald Green,et al.  Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability , 2008 .

[122]  K. Fukuda,et al.  Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1) , 2008 .

[123]  J. Suehle,et al.  Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements , 2008, IEEE Transactions on Electron Devices.

[124]  P. Godignon,et al.  SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator , 2008 .

[125]  M. V. Rao,et al.  Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs , 2008 .

[126]  K. Matocha.  Challenges in SiC power MOSFET design , 2007, 2007 International Semiconductor Device Research Symposium.

[127]  H. Zirath,et al.  High Channel Mobility 4H-SiC MOSFETs , 2006 .

[128]  S. Dimitrijev.  Silicon carbide as a material for mainstream electronics , 2006 .

[129]  A. Agarwal,et al.  10-kV, 123-mOcm2 4H-SiC power DMOSFETs , 2004 .

[130]  Leon M. Tolbert,et al.  Effects of temperature variation (300–600 K) in MOSFET modeling in 6H–silicon carbide , 2004 .

[131]  L. Tolbert,et al.  Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC) , 2003, International Semiconductor Device Research Symposium, 2003.

[132]  S. Suzuki,et al.  Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face , 2002, IEEE Electron Device Letters.

[133]  K. Adachi,et al.  High channel mobility in normally-off 4H-SiC buried channel MOSFETs , 2001, IEEE Electron Device Letters.

[134]  C. Raynaud.  Silica films on silicon carbide: a review of electrical properties and device applications , 2001 .

[135]  D. Planson,et al.  Design of a 600 V silicon carbide vertical power MOSFET , 1999 .

[136]  L. Chow,et al.  Simulation of silicon carbide power MOSFETs at high temperature , 1999 .

[137]  M. Melloch,et al.  High-voltage accumulation-layer UMOSFET's in 4H-SiC , 1998, IEEE Electron Device Letters.

[138]  P. Shenoy,et al.  The planar 6H-SiC ACCUFET: a new high-voltage power MOSFET structure , 1997, IEEE Electron Device Letters.

[139]  M. Melloch,et al.  High-voltage double-implanted power MOSFET's in 6H-SiC , 1997, IEEE Electron Device Letters.