Time-of-Flight Techniques
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[1] J. Gunn,et al. Measurement of the negative differential mobility of electron in GaAs , 1966 .
[2] M. Martini,et al. SHALLOW LEVEL TRAPPING AND DETRAPPING IN Si(Li) DETECTORS AT LOW TEMPERATURES , 1969 .
[3] C. Canali,et al. A 40 keV Pulsed Electron Accelerator , 1970 .
[4] C. Canali,et al. Electron-hole pair ionization energy in CdTe between 85 °K and 350 °K , 1970 .
[5] W. Spear. Transit Time Measurements of Charge Carriers in Amorphous Selenium Films , 1957 .
[6] C. Canali,et al. Diffusion coefficient of holes in Ge , 1978 .
[7] D. Bartelink,et al. High‐Field Diffusivity of Electrons in Silicon , 1971 .
[8] C. Canali,et al. Characterization of high resistivity CdTe for γ-ray detectors , 1971 .
[9] A. Taroni,et al. Plasma effects and charge collection time in solid state detectors , 1969 .
[10] T. Sigmon,et al. DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON , 1969 .
[11] R. Kepler. Charge Carrier Production and Mobility in Anthracene Crystals , 1960 .
[12] D. J. Bartelink,et al. DIFFUSION OF ELECTRONS IN SILICON TRANSVERSE TO A HIGH ELECTRIC FIELD , 1970 .
[13] C. Jacoboni,et al. Negative differential mobility in III–V and II–VI semiconducting compounds , 1971 .
[14] A. Taroni,et al. Space charge limited currents in P-N junctions , 1969 .
[15] A. A. Quaranta,et al. On a new method for measuring the charge carriers drift mobility in high resistivity silicon , 1965 .
[16] William Shockley,et al. The Mobility and Life of Injected Holes and Electrons in Germanium , 1951 .