Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cells.

Electrochemical metallisation (ECM) memory cells potentially suffer from limited memory retention time, which slows down the future commercialisation of this type of data memory. In this work, we investigate Ag/GeSx/Pt redox-based resistive memory cells (ReRAM) with and without an additional Ta barrier layer by time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray absorption spectroscopy (XAS) and synchrotron high-energy X-ray diffractometry (XRD) to investigate the physical mechanism behind the shift and/or loss of OFF data retention. Electrical measurements demonstrate the effectiveness and high potential of the diffusion barrier layer in practical applications.

[1]  H. Barnaby,et al.  Total Ionizing Dose Retention Capability of Conductive Bridging Random Access Memory , 2014, IEEE Electron Device Letters.

[2]  Ilia Valov,et al.  Redox‐Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale , 2014 .

[3]  D. Jeong,et al.  Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes. , 2013, Nanoscale.

[4]  S. Menzel,et al.  Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells. , 2013, Nanoscale.

[5]  Rainer Waser,et al.  Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures , 2013, Scientific Reports.

[6]  Wilfried Vandervorst,et al.  Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells. , 2013, ACS applied materials & interfaces.

[7]  Dirk Wouters,et al.  Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems , 2013 .

[8]  Rainer Waser,et al.  Switching kinetics of electrochemical metallization memory cells. , 2013, Physical chemistry chemical physics : PCCP.

[9]  Jan van den Hurk,et al.  Nanobatteries in redox-based resistive switches require extension of memristor theory , 2013, Nature Communications.

[10]  M. Kozicki,et al.  Cation-based resistance change memory , 2013 .

[11]  Rainer Waser,et al.  Preparation and characterization of GeSx thin-films for resistive switching memories☆ , 2013 .

[12]  J Joshua Yang,et al.  Memristive devices for computing. , 2013, Nature nanotechnology.

[13]  Ilia Valov,et al.  Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories , 2013, Journal of Solid State Electrochemistry.

[14]  Rainer Waser,et al.  Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory , 2012, Advanced materials.

[15]  M. Sasaki.  An electron conduction model of resistive memory for resistance dispersion, fluctuation, filament structures, and Set/Reset mechanism , 2012 .

[16]  R. Waser,et al.  Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces. , 2012, Nature materials.

[17]  R. Waser,et al.  Quantum conductance and switching kinetics of AgI-based microcrossbar cells , 2012, Nanotechnology.

[18]  Keith J Stevenson,et al.  Electrochemical deposition of germanium sulfide from room-temperature ionic liquids and subsequent Ag doping in an aqueous solution. , 2012, Langmuir : the ACS journal of surfaces and colloids.

[19]  M. Kozicki,et al.  Quantized Conductance in $\hbox{Ag/GeS}_{2}/\hbox{W}$ Conductive-Bridge Memory Cells , 2012, IEEE Electron Device Letters.

[20]  S. Menzel,et al.  Simulation of multilevel switching in electrochemical metallization memory cells , 2012 .

[21]  J. Horton,et al.  Photochemically induced oxidation and silver deposition on amorphous germanium sulfide films studied using atomic force microscopy and ion beam methods , 1999 .

[22]  M. Guittard,et al.  Ternaire argent-germanium-sulfure. Quasibinaire disulfure de germanium - sulfure d'argent. Conductivite electrique du verre le plus riche en argent , 1992 .

[23]  S. Elliott,et al.  Photodissolution of silver in amorphous germanium sulphide films , 1991 .

[24]  A. Ibanez,et al.  Characterization of germanium surrounding in GeS, GeS2Ag2S and GeS2Ag2SAgI glassy systems by Ge K-edge X-ray absorption study , 1991 .

[25]  A. Laubengayer,et al.  Absorption Band Spectra of Germanous Sulfide: The Isotopic Constitution of Germanium , 1932 .