论文信息 - A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches - 字舞流文

A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches

K. Kojima | H. Okumura | S. Ji | Y. Yonezawa | S. Yoshida | K. Mochizuki | R. Kosugi | K. Adachi | Y. Kawada | A. Nagata | Yasuko Matsukawa