Extremely flat growth-interrupted InAlAs surface grown on a -oriented InP substrate by molecular beam epitaxy

[1]  S. Hiyamizu,et al.  Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In0.7Ga0.3As/In0.52Al0.48As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxy , 2001 .

[2]  S. Hiyamizu,et al.  Super-flat interfaces in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy , 2000 .

[3]  S. Hiyamizu,et al.  High-quality InAlAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy , 1999 .

[4]  S. Hiyamizu,et al.  High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy , 1999 .

[5]  S. Hiyamizu,et al.  Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy , 1998 .

[6]  S. Hiyamizu,et al.  As4 pressure dependence of the interface flatness of quantum wells grown on (411) A GaAs substrates by MBE , 1997 .

[7]  H. Yamaguchi,et al.  Flattening Transition on GaAs (411)A Surfaces Observed by Scanning Tunneling Microscopy , 1995 .

[8]  S. Hiyamizu,et al.  Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy , 1994 .

[9]  S. Hiyamizu,et al.  Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy , 1993 .

[10]  P. Sobkowicz,et al.  Monte Carlo simulations of spatial correlation effects of charged centres in delta -doping layers , 1992 .