Recombination at dislocations

Abstract A dislocation in semiconductors behaves as a recombination flaw having a large number of charge states. The effective cross section of the dislocation is therefore a variable parameter depending by the electrostatic interaction on the occupation factor. This property manifests itself through peculiarities of photoconductivity of dislocated crystals e.g. logarithmic type decay of excess current carriers at low temperature. The elementary centres of recombination are most probably dangling bonds as indicated by spin-dependent effects. The magnitude of the spin-dependent cross section can be explained only if one takes into account the exchange interaction between neighbouring dangling electrons on a dislocation.

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