A comprehensive and critical re-assessment of 2-stage energy level NBTI model
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S. Mahapatra | S. Gupta | K. Joshi | M. A. Alam | B. Jose | A. Jain
[1] N. Mielke,et al. Universal recovery behavior of negative bias temperature instability [PMOSFETs] , 2003, IEEE International Electron Devices Meeting 2003.
[2] S. Deora,et al. A critical re-evaluation of the usefulness of R-D framework in predicting NBTI stress and recovery , 2011, 2011 International Reliability Physics Symposium.
[3] S. Mahapatra,et al. A consistent physical framework for N and P BTI in HKMG MOSFETs , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).
[4] T. Grasser,et al. A Model for Switching Traps in Amorphous Oxides , 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.
[5] K. Ahmed,et al. The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_{\rm DLIN}$ Technique , 2008, IEEE Transactions on Electron Devices.
[6] S. Demuynck,et al. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits , 2006, 2006 International Electron Devices Meeting.
[7] B. Kaczer,et al. An energy-level perspective of bias temperature instability , 2008, 2008 IEEE International Reliability Physics Symposium.
[8] V. Huard. Two independent components modeling for Negative Bias Temperature Instability , 2010, 2010 IEEE International Reliability Physics Symposium.
[9] S. Deora,et al. A Common Framework of NBTI Generation and Recovery in Plasma-Nitrided SiON p-MOSFETs , 2009, IEEE Electron Device Letters.
[10] K. Ahmed,et al. On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
[11] K. Wu,et al. A new finding on NBTI lifetime model and an investigation on NBTI degradation characteristic for 1.2nm ultra thin oxide [MOSFETs] , 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
[12] S. Krishnan,et al. SRAM Cell Static Noise Margin and VMIN Sensitivity to Transistor Degradation , 2006, 2006 International Electron Devices Meeting.
[13] A. Haggag,et al. Understanding SRAM High-Temperature-Operating-Life NBTI: Statistics and Permanent vs Recoverable Damage , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
[14] M. Nelhiebel,et al. A two-stage model for negative bias temperature instability , 2009, 2009 IEEE International Reliability Physics Symposium.
[15] Souvik Mahapatra,et al. On the universality of negative bias temperature degradation , 2010 .
[16] T. Grasser,et al. The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress , 2010, 2010 IEEE International Reliability Physics Symposium.
[17] K. Ahmed,et al. A comprehensive study of flicker noise in plasma nitrided SiON p-MOSFETs: process dependence of pre-existing and NBTI stress generated trap distribution profiles , 2008, 2008 IEEE International Electron Devices Meeting.