论文信息 - A High-Slew Rate SiGe BiCMOS Operational Amplifier for Operation Down to Deep Cryogenic Temperatures

A High-Slew Rate SiGe BiCMOS Operational Amplifier for Operation Down to Deep Cryogenic Temperatures

We investigate, for the first time, the design and implementation of a high-slew rate op-amp in SiGe BiCMOS technology capable of operation across very wide temperature ranges, and down to deep cryogenic temperatures. We achieve the first monolithic op-amp (for any material system) capable of operating reliably down to 4.3 K. Two variants of the SiGe BiCMOS op-amp were implemented using alternative biasing schemes, and the effects of temperature on these biasing schemes, and their impact on the overall op-amp performance, is investigated

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