Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

A GaN/SiC hybrid field-effect transistor (HyFET) is proposed as a high-voltage power device that provides a high-mobility lateral AlGaN/GaN channel to reduce the channel resistance and a vertical SiC drift region to sustain the high OFF-state voltage. The performance of the HyFET is evaluated by numerical device simulations. Compared with the conventional SiC MOSFET, the HyFET exhibits a greatly reduced R<sub>ON</sub> together with a low C<sub>GD</sub> and low gate charges. The figures of merit Q<sub>G</sub> × R<sub>ON</sub> and Q<sub>GD</sub> × R<sub>ON</sub> of the HyFET are dramatically improved.

[1]  T. Oka,et al.  Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV , 2014 .

[2]  D. Bour,et al.  1.5-kV and 2.2-m (Omega ) -cm (^{2}) Vertical GaN Transistors on Bulk-GaN Substrates , 2014 .

[3]  J. D. del Alamo,et al.  Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors , 2006, 2006 International Electron Devices Meeting.

[4]  Lin Cheng,et al.  Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C , 2012, Journal of Electronic Materials.

[5]  Yong Cai,et al.  Enhancement-Mode$hboxSi_3hboxN_4hbox/AlGaN/GaN$MISHFETs , 2006, IEEE Electron Device Letters.

[6]  Kevin J. Chen,et al.  Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor , 2015, IEEE Electron Device Letters.

[7]  M. Kubát,et al.  Power Semiconductors , 1984 .

[8]  U. Mishra,et al.  The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs , 2001 .

[9]  J. Cooper,et al.  Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications , 2014 .

[10]  O. W. Holland,et al.  Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide , 2001, IEEE Electron Device Letters.

[11]  R. Allan,et al.  Power semiconductors , 1975, IEEE Spectrum.

[12]  S. Yoshida,et al.  Enhancement-mode gan hybrid mos-hemts with ron,sp of 20 mω-cm2 , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

[14]  H. Ishida,et al.  A Normally-off AlGaN/GaN Transistor with RonA=2.6mΩcm2 and BVds=640V Using Conductivity Modulation , 2006, 2006 International Electron Devices Meeting.