Systematic studies of functionalized calixarenes as negative tone electron beam resist

We present a systematic study on properties of calix[n]arenes as a high resolution negative tone electron beam resist. From experiments changing the ring sizes of the calix[n]arenes with n=4,6,8 as well as the functionalisation of the arenes we conclude that electron beam irradiation causes the arenes to break up and link to other arenes or functionalizing groups. This is confirmed by exposing resorcin[4]arene. We demonstrate that this material also shows negative tone high resolution resist features, and patterns are transferred into silicon.