论文信息 - The effect of FET soft turn-on on a Doherty amplifier

The effect of FET soft turn-on on a Doherty amplifier

A Doherty amplifier's theoretical gain and efficiency characteristics significantly exceed those achieved by practical simulations and implementations. Analysis and simulation demonstrates that the FET gate voltage to drain current transfer characteristic has a significant detrimental effect on these characteristics, indicating it is the major factor in the difference between ideal and practical results. © Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1861–1864, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23477

Kimberley W. Eccleston | Stephen I. Mann | Peter T. Gough | Karla J. I. Smith

[1] J. Laskar,et al. Analysis and design of a high-efficiency multistage Doherty power amplifier for wireless communications , 2005, IEEE Transactions on Microwave Theory and Techniques.

[2] W. H. Doherty. A New High Efficiency Power Amplifier for Modulated Waves , 1936 .

[3] Frederick Raab,et al. Efficiency of Doherty RF Power-Amplifier Systems , 1987, IEEE Transactions on Broadcasting.

[4] Bumman Kim,et al. A Ultra-High PAE Doherty Amplifier Basedon 0.13-$mu$m CMOS Process , 2006, IEEE Microwave and Wireless Components Letters.

[5] Jangheon Kim,et al. Optimum operation of asymmetrical-cells-based linear Doherty power Amplifiers-uneven power drive and power matching , 2005 .

[6] Frederick H. Raab,et al. Solid State Radio Engineering , 1980 .

[7] R.A. Pucel,et al. GaAs FET device and circuit simulation in SPICE , 1987, IEEE Transactions on Electron Devices.